SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 1N5408 is a general-purpose silicon rectifier diode housed in the DO-201AD axial leaded package. It provides an average forward current of 3.0 A at 75°C and withstands a maximum repetitive reverse voltage of 1000 V. The device features a non-repetitive peak forward surge current rating of 200 A for a single half-sine wave lasting 8.3 ms. Electrical characteristics include a maximum forward voltage of 1.2 V at 3.0 A, a reverse current of 5.0 µA at 25°C, and a total capacitance of 30 pF at 4.0 V and 1.0 MHz. Thermal resistance from junction to ambient is typically 20 °C/W.
Verify authenticity by purchasing directly from ON Semiconductor or authorized distributors to avoid counterfeit components. Confirm the specific ordering suffix matches the required packing method, such as tape and reel. Ensure compliance with RoHS standards if applicable to your manufacturing process. Validate all operating parameters against your specific application requirements before integration.
Select this component when a standard recovery rectifier with 1000 V blocking capability and 3.0 A continuous current is required. Consider the DO-201AD package dimensions for through-hole mounting constraints. Evaluate thermal management needs based on the 20 °C/W junction-to-ambient resistance. Compare against other members of the 1N540x series if different reverse voltage ratings are needed.
This part belongs to the 1N5401–1N5408 family of general-purpose rectifiers originally developed by Fairchild Semiconductor and now maintained by ON Semiconductor. The series shares identical current and surge ratings while varying only in maximum repetitive reverse voltage. The 1N5408 specifically denotes the 1000 V variant within this standardized lineup.
Other manufacturers produce equivalent parts under the 1N5408 designation, such as Diodes Incorporated (1N5408G-T) and Vishay (1N5408-E3/73). Verify that substitute components meet the same DO-201AD package outline and electrical specifications.