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The Taiwan Semiconductor Corporation 1N5408G is a standard silicon rectifier diode housed in the DO-201AD axial through-hole package. It supports a maximum repetitive peak reverse voltage of 1000 V and an average forward current of 3 A. The device features a maximum non-repetitive surge forward current of 125 A for an 8.3 ms single half-sine wave. Electrical characteristics include a typical forward voltage of 1.0 V at 3 A, a maximum reverse leakage current of 5 µA at rated voltage and 25°C, and a junction capacitance of 25 pF at 1 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and quantity. Standard packages are available in tape and reel or ammo box formats. Confirm RoHS compliance and halogen-free status requirements prior to procurement. Ensure the selected variant matches the required voltage rating within the series specifications.
Select this component for applications requiring robust general-purpose rectification with high surge tolerance. The DO-201AD package provides reliable through-hole mounting for industrial environments. Consider thermal resistance parameters when designing heat dissipation strategies. Verify that the 1000 V reverse voltage rating exceeds the maximum circuit voltage peaks.
This part belongs to the 1N5400G–1N5408G series of standard rectifiers manufactured by Taiwan Semiconductor Corporation. The series covers voltage ratings from 50 V to 1000 V while maintaining a consistent 3 A forward current rating across all variants. The 1N5408G represents the highest voltage option in this specific product line.
Cross-reference with other manufacturers offering the 1N5408 specification. Verify pinout compatibility and package dimensions before substitution. Ensure equivalent electrical ratings for reverse voltage and forward current are met by alternative sources.