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The 1N5415US is a hermetically sealed silicon rectifier diode manufactured by Microchip Technology. It features a single-phase, one-element configuration housed in a D-5B glass axial package with isolated case connection. The device supports a maximum repetitive peak reverse voltage of 50V and an average forward rectified current of 3A. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 80A, a maximum DC reverse leakage current of 1µA at rated voltage, and a maximum forward voltage drop of 1.5V at specified conditions.
Verify the specific suffix US indicates hermetic sealing when sourcing. Confirm compliance with military specifications such as MIL-D-38534 if required for mission-critical designs. Ensure the supplier provides traceability documentation for the glass axial package. Validate that the component meets the intended thermal management requirements for the application environment.
Select this component when hermetic sealing is mandatory for long-term stability in harsh environments. Compare the 50V rating against circuit peak inverse voltage requirements to ensure adequate margin. Evaluate the 3A current capacity against load profiles to prevent thermal overload. Consider the axial leaded package compatibility with existing printed circuit board layouts and mounting constraints.
This part belongs to the standard 1N54xx series of fast recovery rectifiers produced by Microchip Technology under its Microsemi division. The US suffix specifically denotes the hermetically sealed variant, distinguishing it from commercial plastic-packaged equivalents. It serves as a ruggedized alternative for general-purpose rectification where environmental protection is critical.
Substitute only with verified equivalent parts sharing identical hermetic sealing and electrical ratings. Verify pinout compatibility for the D-5B package before integration. Ensure replacement components meet the same military or industrial qualification standards.