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The Microchip Technology 1N5416US/TR is a single fast recovery rectifier diode designed for surface-mount applications. It features a reverse voltage rating of 100 V and an average forward current of 3 A. The device exhibits a maximum forward voltage of 1.5 V and a reverse leakage current of 1 uA. Its fast recovery time is specified at 150 ns, with a maximum surge current capability of 80 A. Operating temperatures range from -65 C to +175 C. The component is housed in a D-5B (MELF) package and is supplied in tape and reel packaging.
Verify the specific suffix TR indicates tape and reel packaging configuration. Confirm RoHS compliance status as listed in official documentation. Ensure the D-5B package dimensions match PCB footprint requirements. Check lead times directly with Microchip or authorized distributors for accurate availability.
Select this component when a surface-mount fast recovery diode is required for 100 V applications. Compare forward voltage drop and recovery time against circuit efficiency needs. Ensure the 3 A current rating meets load requirements. Verify compatibility with reflow soldering profiles for the MELF package.
This part belongs to the 1N5416 series of fast recovery rectifiers manufactured by Microchip Technology. It serves as the surface-mount equivalent to through-hole variants like the 1N5416. The US suffix typically denotes the specific package style and termination type within the product family.
Direct substitutes include other 100 V 3 A fast recovery diodes in SMD packages such as the 1N5416US without the TR suffix for bulk packaging. Cross-reference electrical parameters like reverse recovery time and forward voltage to ensure functional equivalence.