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Product Detailed Parameters
- Description：DIODE AVALANCHE 200V 3A SOD64
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Avalanche
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 9 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：100 ns
- Current - Reverse Leakage @ Vr：1 µA @ 200 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：SOD-64, Axial
- Supplier Device Package：SOD-64
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Vishay 1N5417TR is a fast avalanche sinterglass diode housed in the SOD-64 package. It features a repetitive peak reverse voltage of 200 V and an average forward current rating of 3 A. The device exhibits a maximum forward voltage of 1.1 V at 3 A and a typical reverse recovery time of 75 ns. It supports a peak forward surge current of 100 A and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Glass passivated junction with hermetically sealed package
- Soft recovery characteristics for fast rectification
- Low reverse current and low forward voltage drop
- High pulse current capability
Applications
- Fast rectification diode applications
Procurement Notes
Verify the specific ordering code against the manufacturer's documentation to ensure correct packaging configuration. Confirm that the component meets all required environmental compliance standards before integration into final designs. Cross-reference datasheet revision numbers to validate parameter accuracy.
Selection Notes
Select this component for circuits requiring fast switching speeds and high reliability in harsh environments. The hermetic seal and wide operating temperature range make it suitable for demanding industrial applications. Ensure thermal management aligns with the specified thermal resistance values.
Part Context
This part belongs to the 1N5417/1N5418 series of fast avalanche sinterglass diodes manufactured by Vishay Semiconductors. The series utilizes a glass-passivated junction technology designed for robust performance under high-stress conditions, distinguishing it from standard plastic-encapsulated rectifiers.
Replacement Considerations
Direct substitutes include the JAN1N5417/TR variant which shares similar electrical ratings but differs in package style.
FAQ
What is the maximum non-repetitive reverse avalanche energy?
The maximum non-repetitive reverse avalanche energy is 20 mJ when tested at a reverse current of 1 A.
How is the cathode polarity identified on the SOD-64 package?
A color band on the component body denotes the cathode end.
