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The Microchip Technology 1N5417US/TR is a single fast recovery rectifier diode designed for surface-mount applications. It features a 200 V reverse voltage rating and supports a continuous forward current of 3 A. The device exhibits a maximum forward voltage drop of 1.5 V at rated current and a reverse leakage current of 1 uA. Its fast recovery time is specified at 150 ns, with a peak non-repetitive surge current capability of 80 A. The component operates within a temperature range of -65 °C to +175 °C and utilizes the B-Package-2 form factor.
Verify that the specific suffix /TR indicates tape-and-reel packaging configuration as per manufacturer documentation. Confirm RoHS compliance status, as military-grade variants may differ from commercial standards. Ensure the B-Package-2 footprint matches the target PCB layout requirements before finalizing procurement orders.
Select this component when a surface-mount solution is required for 3 A rectification tasks. The 200 V rating defines the maximum working peak reverse voltage limit. Consider the 150 ns recovery time against circuit switching frequencies. Verify that the SMD package accommodates the available board space compared to through-hole alternatives.
This part belongs to the industry-recognized 1N541x series of fast recovery rectifiers. It shares electrical characteristics with other members of the family but differs in package type and manufacturing qualification levels. The US suffix typically denotes a surface-mount variant, distinguishing it from axial leaded versions like the JAN1N5417.
Direct substitutes include JAN1N5417/TR for through-hole equivalents or 1N5417US without the reel suffix if loose components are acceptable. Cross-reference with other manufacturers' 1N5417 specifications to ensure pinout and thermal compatibility.