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The Microchip Technology 1N5417US is a single fast recovery rectifier diode designed for surface-mount applications. It features a maximum repetitive peak reverse voltage of 200 V and an average forward current rating of 3 A. The device exhibits a forward voltage drop of 1.5 V at rated current and a maximum reverse leakage current of 1 uA. Its fast recovery time is specified at 150 ns, with a non-repetitive peak forward surge current capability of 80 A. The component operates within a temperature range of -65 °C to +175 °C and is housed in the B-Package-2 SMD/SMT package.
Verify the specific suffix US against official Microchip documentation to confirm the surface-mount package configuration and lead-free status. Ensure that the procurement specifications align with the required 200V reverse voltage and 3A current ratings for the target circuit design. Cross-reference the B-Package-2 footprint requirements with PCB layout guidelines before finalizing orders.
Select this component when a surface-mount fast recovery rectifier is required for 200V applications. Compare the 150 ns recovery time against system switching frequencies to ensure adequate performance. Evaluate the thermal management needs given the 175 °C maximum junction temperature limit and the specific power dissipation constraints of the B-Package-2 housing.
This part belongs to the 1N54xx series of fast recovery rectifiers manufactured by Microchip Technology. It serves as the surface-mount equivalent to through-hole variants like the 1N5418e3, offering similar electrical characteristics in a compact form factor. The series is engineered for general-purpose rectification in demanding electronic environments requiring reliable high-speed switching performance.
Consult official substitution lists for verified equivalents. Generic replacements must match the 200V VR, 3A IF, and 150 ns trr specifications while fitting the B-Package-2 footprint.