1N5418/TR

Overview

The Microchip Technology 1N5418/TR is a fast recovery rectifier diode designed for through-hole mounting in the B-Axial package. It features a maximum repetitive peak reverse voltage of 400 V and an average rectified forward current of 3 A. The device exhibits a typical reverse recovery time of 150 ns and a maximum forward voltage of 1.5 V at 9 A. Operating junction temperatures range from -65°C to +175°C, with a surge current rating of 80 A.

Feature Summary

• Fast recovery performance suitable for high-frequency switching applications
• Hermetically sealed construction for environmental durability
• Wide operating temperature range for extreme condition reliability

Applications

• High frequency rectification circuits
• Inverter freewheeling diodes
• General purpose rectification in industrial equipment

Procurement Notes

Verify the specific suffix against official datasheets to confirm package type and compliance status. Ensure the ordering code matches the required military or commercial grade specifications. Confirm RoHS status as standard versions may not be compliant. Validate lead times due to potential supply chain constraints for specialized semiconductor components.

Selection Notes

Select this component when a 400 V blocking capability and 3 A continuous current are required in an axial package. Consider the 150 ns recovery time for efficiency in high-speed switching topologies. Evaluate thermal management requirements given the wide operating temperature range and power dissipation characteristics under load conditions.

Part Context

This part belongs to the 1N54xx series of fast recovery rectifiers manufactured by Microchip Technology. It serves as a robust solution for power conversion applications requiring reliable high-voltage handling. The series includes variants with different voltage ratings while maintaining consistent current and recovery characteristics.

Replacement Considerations

Direct substitutes include JANTX1N5418 and 1N5418e3. Verify pinout compatibility and electrical parameter equivalence before substitution.