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The Microchip Technology 1N5418US/TR is a fast recovery rectifier diode designed for surface-mount applications. It features a single silicon element with a maximum repetitive peak reverse voltage of 400 V and an average forward rectified current of 3 A. The device exhibits a typical reverse recovery time of 150 ns and a maximum forward voltage drop of 1.5 V at 9 A. It operates within a junction temperature range of -65°C to +175°C and is supplied in a B-Package-2 SMD configuration.
Verify the specific suffix US/TR against the manufacturer's official datasheet to confirm the exact package type, lead finish, and reel specifications. Ensure the component meets all required military qualification standards for your application. Cross-reference the part number with the latest Product Change Notifications to identify any recent manufacturing or material updates that may affect compatibility.
Select this component when a hermetically sealed, military-qualified fast recovery diode is required for surface-mount assembly. It serves as a robust alternative to through-hole variants in space-constrained designs. Consider the 150 ns reverse recovery time and 400 V blocking capability when designing circuits requiring efficient high-voltage rectification under extreme thermal conditions.
This part belongs to the 1N5415 through 1N5420 series of industry-recognized 3.0 amp rated rectifiers. These devices are characterized by their voidless-glass construction and internal category marking. The series covers working peak reverse voltages from 50 to 600 volts, providing a standardized solution for critical power conversion tasks in demanding environments.
Direct substitutes include JANTX1N5418 and JANS1N5418. Verify pinout and package dimensions before substitution.