1N5419

1N5419

$4.17
  • Description:DIODE STANDARD 500V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:f36e27c560d9 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 500V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):500 V
  • Current - Average Rectified (Io):3A
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 9 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):250 ns
  • Current - Reverse Leakage @ Vr:1 µA @ 500 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, B
  • Supplier Device Package:B, SQ-MELF
  • Operating Temperature - Junction:-65°C ~ 175°C

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1N5419

Overview

The Microchip Technology 1N5419 is a fast recovery rectifier diode designed for through-hole mounting in the B-package-2 axial configuration. It features a maximum repetitive peak reverse voltage of 500 V and an average forward current rating of 3 A. The device exhibits a maximum forward voltage drop of 1.5 V at rated current and supports a non-repetitive peak surge current of 80 A. Reverse leakage current is specified at 1 µA, with a typical reverse recovery time of 250 ns. The component operates within a junction temperature range from -65 °C to +175 °C.

Feature Summary

  • Fast recovery performance suitable for high-frequency switching applications
  • Hermetically sealed glass encapsulation for environmental protection
  • High thermal stability supporting extended operating temperatures up to 175 °C

Applications

  • High voltage power supply circuits
  • Industrial motor drive systems
  • Military and aerospace electronic equipment

Procurement Notes

Verify that the specific order contains the JANS or JANTX prefix if radiation tolerance or military qualification is required, as the base 1N5419 designation may refer to commercial variants. Confirm RoHS compliance status, as many versions are explicitly marked non-compliant. Ensure the package matches the B-Axial specification for mechanical fit. Request the official datasheet to validate electrical parameters against design requirements before finalizing procurement.

Selection Notes

Select this component when a 500 V blocking capability and 3 A continuous current handling are necessary. The fast recovery characteristic distinguishes it from standard rectifiers, making it appropriate for applications requiring reduced switching losses. Compare the 250 ns recovery time against circuit speed requirements. Verify that the axial leaded package aligns with the printed circuit board layout constraints and thermal management strategy.

Part Context

This part belongs to the 1N54xx series of silicon rectifier diodes manufactured by Microchip Technology. The series includes variants with different reverse voltage ratings, such as the 1N5418 (400 V) and 1N5420 (600 V). These components share common physical dimensions and electrical characteristics like forward voltage and surge current capacity, differing primarily in their peak inverse voltage specifications.

Replacement Considerations

The 1N5419US is a hermetically sealed variant offering equivalent electrical performance. Cross-reference with other manufacturers' 1N5419 equivalents to ensure pinout compatibility and parameter matching.

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