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Product Detailed Parameters
- Description：DIODE STANDARD 200V 3A B AXIAL
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 9 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：2 µs
- Current - Reverse Leakage @ Vr：1 µA @ 200 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：B, Axial
- Supplier Device Package：B, Axial
- Operating Temperature - Junction：-65°C ~ 175°C
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Overview
The Microchip Technology 1N5550/TR is a single standard recovery rectifier diode designed for through-hole mounting in the B-SQ-MELF-2 package. It features a maximum repetitive peak reverse voltage of 200 V and an average forward current rating of 5 A. The device exhibits a maximum forward voltage drop of 1.2 V at rated current and a low reverse leakage current of 1 uA. It supports a maximum surge current of 100 A and has a typical reverse recovery time of 2 us. The component operates within a temperature range of -65 C to +175 C junction temperature.
Feature Summary
- Standard recovery rectifier configuration optimized for general-purpose power conversion applications
- High thermal stability with extended operating temperature range up to 175 C
- Robust surge current handling capability for transient protection scenarios
Applications
- General purpose rectification in AC/DC power supplies
- Freewheeling diodes in inductive load circuits
- Reverse polarity protection in DC input systems
Procurement Notes
Verify the specific suffix TR indicates tape and reel packaging configuration when ordering. Confirm RoHS compliance status as N indicates non-compliance with current directives. Check lead times due to potential supply chain constraints for military-grade variants. Ensure the MELF package footprint matches the target PCB design requirements before finalizing procurement.
Selection Notes
Select this component where high current capacity and wide temperature operation are required. Compare against similar 200V rectifiers if lower cost or different packaging is preferred. Consider the MELF form factor for automated assembly processes. Verify that the 2 us recovery time meets the switching frequency requirements of the specific circuit topology.
Part Context
This part belongs to the 1N55xx series of silicon rectifier diodes manufactured by Microchip Technology. The series provides reliable performance for industrial and commercial applications requiring robust power handling. The 1N5550 variant specifically addresses needs for 200V blocking voltage with 5A continuous current capability.
Replacement Considerations
Direct substitutes include JAN1N5550/TR from Microchip which shares identical electrical specifications and package type. Other manufacturers may offer equivalent parts under different numbering schemes but require verification of pinout and thermal characteristics.
