1N5550USE3

Overview

The Microchip Technology 1N5550USE3 is a single-element silicon rectifier diode designed for surface-mount applications. It features a B-SQ-MELF-2 package and supports through-hole or SMD mounting styles. The device offers a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 5 A. Key electrical characteristics include a maximum DC reverse leakage current of 1 µA, a forward voltage drop of 1.2 V at rated current, and a maximum surge current capability of 100 A. The component operates within a temperature range of -65 °C to +175 °C junction temperature.

Feature Summary

• Standard recovery performance with fast switching capabilities
• High thermal stability suitable for demanding environments
• Robust construction in a compact MELF form factor

Applications

• General purpose rectification circuits
• Power supply input stages
• DC-DC converter topologies

Procurement Notes

Verify the specific suffix 'USE3' indicates lead-free composition and RoHS compliance status against the manufacturer's latest documentation. Confirm the package variant matches the required PCB footprint. Check for lifecycle status updates as components may transition to non-recommended new design (NRND) status. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet prior to assembly.

Selection Notes

Select this component when a standard recovery diode with high surge current handling is required in a small surface-mount package. Compare the 5 A continuous current rating against circuit load requirements. Evaluate the 200 V reverse voltage margin relative to peak inverse voltages in the application. Consider the 175 °C maximum junction temperature for high-temperature operational reliability compared to lower-rated alternatives.

Part Context

This part belongs to the 1N5550 series of silicon rectifiers manufactured by Microchip Technology. It is functionally related to the axial leaded 1N5550 but utilizes a molded glass MELF package for surface mounting. The series is characterized by standard recovery times and high surge capacity, making it suitable for general-purpose power conversion tasks where space constraints preclude larger packages.

Replacement Considerations

Direct pin-compatible replacements include the 1N5550USE3/TR tape-and-reel variant. Verify equivalent electrical parameters such as 200 V reverse voltage and 5 A forward current before substitution. Cross-reference with other manufacturers offering similar MELF-packaged standard recovery diodes if availability is constrained.