1N5551US

Overview

The Microchip Technology 1N5551US is a silicon standard recovery rectifier diode designed for high-reliability applications. It features a MELF-B package with two pins and supports a maximum repetitive reverse voltage of 400 V. The device handles a forward current of 3 A and exhibits a low forward voltage drop of 1.2 V at rated conditions. Key electrical parameters include a maximum non-repetitive peak forward surge current of 150 A, a maximum reverse leakage current of 1 uA, and a typical reverse recovery time of 2 us. It operates within a temperature range of -65 C to +175 C.

Feature Summary

• Hermetically sealed construction in a voidless metal oxide case for environmental protection
• Military qualification compliant with MIL-PRF-19500/420 standards
• Low reverse leakage current characteristics for efficient operation
• Avalanche capability for robust transient handling

Applications

• Space electronics systems
• Commercial and military aircraft avionics
• Military vehicle power circuits
• Shipboard electronic equipment
• High reliability general purpose rectification

Procurement Notes

Verify the specific suffix US indicates the MELF-B package variant rather than the axial DO-41 style. Confirm that the component meets the required MIL-PRF-19500/420 quality level for your application. Check for RoHS compliance status as indicated in official documentation. Ensure the supplier provides traceability data consistent with military-grade procurement requirements.

Selection Notes

Select this component when hermetic sealing and extreme temperature tolerance are mandatory. The MELF-B package offers compact surface-mount integration compared to traditional axial leads. Verify that the 400 V reverse voltage rating aligns with circuit peak inverse voltage demands. Consider the 2 us recovery time suitability for standard frequency rectification tasks.

Part Context

This part belongs to the 1N5550 through 1N5554 series of standard recovery rectifiers. These devices are widely recognized for their ruggedness in harsh environments. The US suffix specifically denotes the metal leaded frame package variant. This series serves as a foundational component in defense and aerospace power management designs.

Replacement Considerations

Equivalent parts include JAN1N5551US and JANS1N5551US from other manufacturers. Cross-reference must confirm identical MELF-B packaging and MIL-PRF-19500/420 qualification. Verify matching electrical limits for voltage, current, and thermal performance before substitution.