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The Microchip Technology 1N5552/TR is a standard recovery rectifier diode designed for through-hole mounting. It features a single configuration with a maximum repetitive peak reverse voltage of 600 V and an average forward rectified current of 3 A. The device exhibits a maximum forward voltage drop of 1.2 V at rated current and a low reverse leakage current of 1 uA. It supports a maximum surge current of 100 A and operates within a junction temperature range of -65°C to +175°C. The component utilizes a Package-B-2 axial leaded form factor and is supplied in bulk packaging.
Verify the specific suffix TR indicates tape and reel packaging versus bulk, as datasheets may list bulk. Confirm RoHS status as non-compliant per available data. Check for recent Product Change Notifications regarding material or process updates. Ensure the ordering quantity matches the manufacturer's minimum order requirements for the specified packaging type.
Select this component when a hermetically sealed, glass-passivated rectifier is required for high-reliability applications. The 600 V rating suits medium-voltage AC-to-DC conversion. Consider the 175°C maximum junction temperature for harsh environments. Verify that the axial leaded Package-B-2 fits the PCB layout constraints compared to surface mount alternatives.
This part belongs to the 1N555x series of silicon rectifier diodes manufactured by Microchip Technology (formerly Microsemi). The series covers reverse voltages from 200 V to 1000 V with a consistent 3 A forward current rating. These diodes are characterized by their glass passivation and hermetic sealing, distinguishing them from standard plastic-packaged equivalents in the same current class.
Direct substitutes include other hermetically sealed 3 A 600 V rectifiers such as the 1N5552 without the TR suffix for bulk packaging. Cross-reference with MIL-S-19500 qualified parts from other manufacturers if military specifications are mandatory.