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The Microchip Technology 1N5552 is a single standard recovery rectifier diode designed for through-hole mounting in the B-Package-2 axial configuration. It features a maximum repetitive reverse voltage of 600 V and an average forward current rating of 9 A. The device exhibits a forward voltage drop of 1.2 V at 9 A and a maximum non-repetitive peak surge current of 100 A. Reverse leakage current is limited to 1 uA, with a typical reverse recovery time of 2 us. It operates within a junction temperature range of -65 C to +175 C.
Verify component authenticity by cross-referencing the manufacturer part number and date code against official Microchip documentation. Confirm package style matches the required B-Package-2 axial form factor. Ensure the specific revision aligns with design requirements regarding lead composition and RoHS status, as indicated in the latest product change notifications.
Select this component when a 600 V blocking voltage and 9 A continuous current capacity are required in an axial through-hole package. Consider the 2 us reverse recovery time for switching frequency limitations. Evaluate thermal management needs given the high operating temperature limit and ensure the circuit can withstand the specified 100 A surge current without exceeding absolute maximum ratings.
This component belongs to the 1N55xx series of silicon rectifiers manufactured by Microchip Technology. The series provides various voltage ratings while maintaining consistent current handling and package dimensions. The 1N5552 specifically addresses applications requiring 600 V isolation with high current throughput in standard industrial and commercial electronics environments.
Direct substitutes include other manufacturers' 1N5552 equivalents meeting identical electrical specifications. Verify pinout compatibility and physical dimensions before substitution. Cross-reference datasheets for any differences in reverse recovery characteristics or thermal resistance values.