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The Microchip Technology 1N5552US is a standard recovery rectifier diode designed for surface-mount applications. It features a single configuration within the B-SQ-MELF-2 package, offering a maximum repetitive reverse voltage of 600 V and an average forward current rating of 5 A. The device exhibits a forward voltage drop of 1.2 V at rated current and maintains a low reverse leakage current of 1 uA. With a typical reverse recovery time of 2 us and a peak non-repetitive surge current capacity of 100 A, it supports reliable operation across a junction temperature range from -65 C to +175 C.
Verify the specific suffix US against the official datasheet to confirm surface-mount compatibility and package dimensions. Confirm RoHS status as non-compliant if required by project specifications. Check for recent Product Change Notifications regarding assembly site or material updates before finalizing procurement orders.
Select this component when a surface-mount standard recovery rectifier with high thermal stability is required. Ensure the circuit design accommodates the 600 V reverse voltage rating and 5 A continuous current capability. Verify that the PCB layout supports the B-SQ-MELF-2 footprint and thermal dissipation requirements for the intended operating environment.
This part belongs to the 1N555x series of glass-passivated silicon rectifiers manufactured by Microchip Technology. The series includes various voltage ratings and package options, with the US suffix specifically denoting the surface-mount MELF variant. These components are widely used in applications requiring robust rectification performance in compact form factors.
The 1N5552US is listed as Not Recommended for New Designs (NRND). Consider substituting with the 1N5552US if available, or evaluate alternative surface-mount rectifiers with equivalent electrical characteristics and package compatibility.
The maximum operating junction temperature is +175 C.
Yes, the device utilizes a glass-passivated cavity-free junction for improved reliability.