SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5616US is a standard recovery rectifier diode designed for surface-mount applications. It features a single configuration with a maximum repetitive peak reverse voltage of 400 V and an average forward rectified current of 1 A. The device utilizes a D-5A-2 package, also known as SQ SMT, and operates within a temperature range of -65 °C to +200 °C. Key electrical characteristics include a forward voltage of 1.3 V at specified current, a maximum surge current of 30 A, and a reverse leakage current of 500 nA. The typical reverse recovery time is 2 µs.
Verify the specific suffix designation against official Microchip documentation to confirm screening levels and environmental compliance. Ensure the procurement channel provides valid traceability records for hermetically sealed components. Confirm that the delivered package matches the D-5A-2 form factor required by the design. Validate that all handling procedures adhere to the static-sensitive and moisture-sensitive protocols defined in the manufacturer's datasheet.
Select this component when a surface-mount standard recovery rectifier is required for high-temperature applications. The 400 V rating and 1 A current capacity define its operational limits. Consider the D-5A-2 package dimensions for PCB layout constraints. Compare thermal management requirements against the 200 °C maximum junction temperature specification. Evaluate the 2 µs reverse recovery time against circuit switching frequencies.
This part belongs to the 1N56xx series of silicon rectifiers manufactured by Microchip Technology. The series includes various voltage ratings and package options, such as through-hole axial leads and surface-mount configurations. The US suffix typically denotes a specific surface-mount variant within this family, distinct from the standard axial 1N5616 or other military screened versions like JANTX.
Publicly confirmed substitute part numbers are not available in the provided source material.