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The Microchip Technology 1N5617 is a silicon rectifier diode designed for high-reliability applications. It features a single-element configuration with a maximum average forward rectified current of 1 A and a maximum repetitive peak reverse voltage of 400 V. The device utilizes a hermetically sealed glass package, specifically the DO-7 (O-XALF-W2) form factor, ensuring isolation between the case and terminals. It supports a maximum non-repetitive peak forward surge current of 50 A and operates within a junction temperature range from -65 °C to +175 °C. The component exhibits a maximum forward voltage of 1.2 V at rated conditions.
Verify the specific manufacturer source, as the 1N5617 designation is utilized by multiple producers including TT Electronics and Semtech. Confirm that the received unit matches the required hermetic sealing standard and package style. Ensure compliance with relevant military specifications if the application demands qualified reliability standards. Check for lead-free status variations across different production batches.
Select this component when a robust, hermetically sealed rectifier is required for harsh environments. The 400 V rating provides adequate margin for general-purpose AC-to-DC conversion. Consider the axial leaded package constraints during PCB layout. Evaluate the thermal management requirements given the 175 °C maximum junction temperature capability.
The 1N5617 belongs to a series of fast recovery rectifiers often associated with MIL-S-19500 standards. While similar in function to Vishay's Superectifier line, the Microchip variant emphasizes hermetic sealing. It serves as a rugged alternative to plastic-packaged equivalents in critical infrastructure and defense electronics where moisture resistance is paramount.
JAN1N5617US offers a comparable hermetically sealed glass package with identical electrical ratings. Verify pinout compatibility and package dimensions before substitution.