SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5618 is a standard recovery rectifier diode designed for general-purpose applications. It features a maximum average forward rectified current of 1 A and a repetitive peak reverse voltage rating of 600 V. The device utilizes a silicon planar junction construction with a glass-passivated cathode to ensure stability under harsh conditions. Key electrical parameters include a maximum non-repetitive peak forward surge current of 30 A, a maximum DC reverse leakage current of 500 mA at rated voltage, and a typical forward voltage drop of 800 mV. The component supports an operating junction temperature range from -65 °C to +200 °C.
Verify the specific suffix code on the datasheet or purchase order, as variants such as JAN1N5618 may differ in qualification level or packaging. Confirm RoHS compliance status, as military-grade versions often lack lead-free certification. Ensure the axial lead package matches the target PCB footprint requirements before finalizing procurement.
Select this component when a robust 600 V, 1 A rectifier is required for standard frequency operations. The wide junction temperature range makes it suitable for high-thermal environments where standard commercial diodes might fail. Consider the 500 mA reverse leakage specification when designing low-power standby modes to minimize quiescent current consumption.
This part belongs to the 1N561X series of glass-passivated junction rectifiers manufactured by Microchip Technology. The series covers various voltage ratings from 200 V to 1000 V while maintaining a consistent 1 A current handling capability. These components are widely used in industrial and aerospace electronics requiring reliable standard recovery performance.
Publicly confirmed substitute part numbers are not available in the provided documentation.