1N5619

Overview

The Microchip Technology 1N5619 is a single-element fast recovery rectifier diode constructed from silicon. It features a maximum repetitive reverse voltage of 600 V and an average forward current rating of 500 mA. The device exhibits a maximum forward voltage of 800 mV at rated current and a reverse leakage current of 500 nA. Its fast recovery time is specified at 250 ns, with a peak non-repetitive surge current capability of 25 A. The component operates within a junction temperature range of -65°C to +175°C and utilizes the Package-A-2 through-hole form factor.

Feature Summary

• Fast recovery performance optimized for high-efficiency switching applications
• High thermal stability supporting operation up to 175°C junction temperature
• Robust surge current handling capability for transient protection
• Low leakage current characteristics ensuring minimal power loss in reverse bias

Applications

• High-frequency DC-to-DC converter circuits
• Free-wheeling diode configurations in power supplies
• Polarity protection in electronic systems
• General-purpose rectification in industrial equipment

Procurement Notes

Verify the specific revision level and package variant when ordering, as manufacturing sources may vary between Microchip and legacy Microsemi origins. Confirm RoHS compliance status, as standard commercial versions may not meet lead-free requirements compared to military-grade equivalents. Ensure the selected part matches the required through-hole mounting style and verify that the 500 mA current rating aligns with the design's thermal dissipation constraints.

Selection Notes

Select this component for designs requiring fast switching speeds with moderate current capacity. The 600 V reverse voltage rating provides sufficient headroom for common bus voltages. Consider the 500 mA average current limit carefully; if higher continuous current is needed, evaluate parallel configurations or higher-rated alternatives. The wide operating temperature range makes it suitable for harsh environments where standard silicon diodes might fail.

Part Context

This device belongs to the 1N56xx series of glass-passivated fast recovery rectifiers manufactured by Microchip Technology. The series offers various voltage ratings from 200 V to 1000 V while maintaining consistent fast recovery characteristics. These diodes are widely used in aerospace, defense, and industrial sectors due to their reliability and proven performance in critical power conversion applications.

Replacement Considerations

JAN1N5619: Military-grade hermetically sealed version with identical electrical specifications but enhanced environmental resistance. JANS1N5619US/TR: Surface-mount variant offering similar performance in a different package format.