SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5621US is a single-element fast recovery rectifier diode designed for surface-mount applications. It features an A-Package-2 (SQ-MELF) housing and supports a maximum repetitive reverse voltage of 800 V with an average forward rectified current rating of 1 A. The device exhibits a typical forward voltage drop of 1.6 V at full load and maintains a reverse leakage current of 500 nA at rated voltage. Its fast recovery time is specified at 300 ns, enabling efficient switching performance. The component operates reliably within a junction temperature range of -65°C to +175°C.
Verify the specific suffix designation against official Microchip documentation to confirm exact packaging and qualification levels. Confirm RoHS compliance status as military-grade variants often differ from commercial standards. Validate that the SQ-MELF footprint matches the target PCB design constraints before finalizing procurement orders.
Select this component when high-voltage blocking capability and rapid reverse recovery are required in a compact surface-mount form factor. Ensure the circuit design accommodates the 800 V reverse voltage rating and 1 A continuous current limits. Consider the thermal management requirements associated with the 175°C maximum junction temperature specification during operation.
This part belongs to the 1N56xx series of standard and fast recovery rectifiers manufactured by Microchip Technology. The US suffix typically denotes a specific surface-mount variant within this family, distinct from through-hole axial packages. These components are widely utilized in industrial and aerospace electronics where reliability under harsh environmental conditions is critical.
JAN1N5621/TR: Through-hole alternative with similar electrical ratings but different mounting style.