1N5622/TR

Overview

The Microchip Technology 1N5622/TR is a standard recovery rectifier diode designed for through-hole mounting in the A-Axial package. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward rectified current of 1 A. The device exhibits a maximum forward voltage drop of 1.3 V at 3 A and a reverse leakage current of 500 nA at 1000 V. Its junction temperature range spans from -65°C to +200°C, with a typical reverse recovery time of 2 µs.

Feature Summary

• High-temperature operation capability up to 200°C junction temperature
• Standard recovery characteristics suitable for general-purpose applications
• Robust axial leaded construction for reliable through-hole integration

Applications

• Industrial power supply circuits
• Automotive electronics systems
• Consumer appliance rectification

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number and datasheet specifications. Confirm RoHS compliance status as indicated in official documentation. Ensure packaging details match project requirements. Validate technical parameters against the latest public data sheets before finalizing procurement decisions.

Selection Notes

Select this component when high-temperature stability and standard recovery performance are required. The 1000 V rating supports high-voltage DC applications. Consider the axial package constraints for PCB layout. Evaluate thermal management needs given the wide operating temperature range.

Part Context

This part belongs to the 1N56xx series of standard recovery rectifiers manufactured by Microchip Technology. The series offers various voltage ratings while maintaining consistent current handling capabilities. These components are widely used in legacy and modern designs requiring robust silicon rectification solutions.

Replacement Considerations

Publicly confirmed substitute part numbers include 1N4007-AP and 1N4007-BP.