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The Microchip Technology 1N5622 is a standard recovery rectifier diode rated for 1000 V DC reverse voltage and 1 A average forward current. It features a maximum forward voltage of 1.3 V at 3 A and a reverse leakage current of 500 nA at 1000 V. The device has a reverse recovery time of 2 µs and operates within a junction temperature range of -65°C to 200°C. It utilizes an axial through-hole package (DO-15/DO-204AC) with isolated case connection.
Verify the specific suffix (e.g., JAN, JANTX) against the design requirement, as these indicate different reliability levels under MIL-PRF-19500/427. Confirm RoHS status, as this component series is typically non-compliant. Ensure the procurement source provides valid traceability documentation for military-grade parts.
Select the 1N5622 when a 1000 V rating is required alongside hermetic sealing for harsh environments. Compare against the 1N5623 if faster switching speeds are needed, noting the difference in reverse recovery characteristics. Ensure the circuit design accommodates the 200°C maximum junction temperature capability.
This component belongs to the 1N5614 through 1N5622 series of standard recovery glass rectifiers manufactured by Microchip Technology's Scottsdale Division. These devices are industry-recognized for their robustness in critical applications, offering working peak reverse voltages from 200 to 1000 volts with consistent 1.0 Amp ratings.
Publicly confirmed substitute part numbers include JAN1N5620 (800V variant) and other members of the 1N56xx series depending on voltage requirements. Verify pinout compatibility and thermal management specifications before substitution.