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The Microchip Technology 1N5622US/TR is a silicon standard recovery rectifier diode designed for surface mount applications. It features a single element configuration with a maximum average forward rectified current of 1 A and a peak non-repetitive reverse voltage of 1000 V. The device exhibits a maximum forward voltage of 1.3 V at 3 A and a reverse leakage current of 500 nA at 1000 V. It operates within a junction temperature range of -65°C to +200°C and has a maximum reverse recovery time of 2 µs.
Verify the specific datasheet revision and RoHS compliance status, as documentation indicates potential variations. Confirm the exact package marking and lead finish against the manufacturer's latest production notices. Ensure the ordering part number matches the required tape and reel quantity specifications for surface mount integration.
Select this component when high-temperature stability and surface mount compatibility are required for 1000 V rectification tasks. Compare performance metrics such as reverse recovery time and thermal resistance against alternative surface mount packages. Validate that the 1 A current rating meets the circuit's continuous load requirements without exceeding thermal limits.
This component belongs to the 1N56xx series of general-purpose rectifiers manufactured by Microchip Technology. The series includes both axial leaded and surface mount variants, offering standardized electrical characteristics for industrial and commercial applications. The US suffix denotes the specific surface mount package configuration.
Direct substitutes include other 1N5622 equivalents from different manufacturers. Verify pinout compatibility and package dimensions before substitution. Ensure replacement parts meet the same 1000 V and 1 A ratings.