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The Microchip Technology 1N5623E3/TR is a surface-mount fast recovery rectifier diode designed for high-reliability applications. It features a single configuration with a maximum repetitive peak reverse voltage of 1000 V and an average forward rectified current rating of 1 A. The device exhibits a forward voltage drop of 1.6 V at 3 A and a maximum reverse leakage current of 500 nA at 1000 V. Key electrical parameters include a maximum surge current of 25 A, a reverse recovery time of 500 ns, and a junction capacitance of 15 pF at 12 V. It operates within a temperature range of -65°C to +175°C and utilizes the D-5A package.
Verify that the specific suffix E3 indicates lead-free compliance compared to standard variants. Confirm the D-5A surface mount package dimensions match the target PCB layout. Ensure the procurement channel provides valid traceability documentation required for military or aerospace qualification standards associated with this component series.
Select this component when a 1000 V rated fast recovery rectifier is required in a surface-mount form factor. It serves as the lead-free variant of the 1N5623US series. Consider the 500 ns reverse recovery time for circuit timing constraints. Verify thermal management requirements given the 175°C maximum junction temperature capability and the specific thermal characteristics of the D-5A package.
This part belongs to the 1N5615 through 1N5623 series of surface mount voidless hermetically sealed fast recovery glass rectifiers. These devices are industry-recognized for their robust metallurgical bonds and are often utilized in sectors demanding high reliability. The series complements axial-leaded versions like the 1N5623, offering similar electrical performance in a compact SMD footprint.
Publicly confirmed substitute part numbers for this specific variant are not available in the provided source material.