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The Microchip Technology 1N5623E3 is a standard recovery rectifier diode designed for through-hole mounting. It features an axial leaded package configuration, specifically the A-Package style. The component supports a maximum repetitive reverse voltage of 1000 V and conducts an average forward current of 1 A. Key electrical characteristics include a forward voltage drop of 1.3 V at 3 A and a reverse leakage current of 500 nA at 1000 V. The device exhibits a reverse recovery time of 2 µs and can withstand a maximum surge current of 30 A. It operates within a junction temperature range of -65°C to +200°C.
Verify that the specific part number suffix matches the required RoHS compliance status, as standard variants may differ from environmental specifications. Confirm the package type corresponds to the intended PCB layout requirements. Ensure the manufacturer source is authorized to guarantee authenticity and traceability for critical electronic assemblies.
Select this component when a standard recovery time of 2 µs is sufficient for the switching frequency requirements. The 1000 V rating provides adequate headroom for high-voltage mains applications. Consider the axial leaded package for manual assembly or specific mechanical constraints where surface mount options are unsuitable.
This component belongs to the 1N56xx series of silicon rectifiers manufactured by Microchip Technology. The series offers various voltage ratings while maintaining consistent current handling capabilities. These devices are widely utilized in legacy and modern designs requiring reliable, cost-effective discrete rectification solutions.
Compatible substitutes include the 1N4007-AP and 1N4007-BP, which offer similar electrical characteristics for standard rectification tasks.