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Product Detailed Parameters
- Description：DIODE AVALANCHE 800V 3A SOD64
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Cut Tape (CT),Tape & Box (TB)
- Technology：Avalanche
- Voltage - DC Reverse (Vr) (Max)：800 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：1 V @ 3 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：7.5 µs
- Current - Reverse Leakage @ Vr：1 µA @ 200 V
- Capacitance @ Vr, F：60pF @ 4V, 1MHz
- Mounting Type：Through Hole
- Package / Case：SOD-64, Axial
- Supplier Device Package：SOD-64
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Vishay 1N5627-TAP is a standard avalanche sinterglass diode housed in an SOD-64 package. It provides an average forward current of 3 A and a repetitive peak reverse voltage of 800 V. The device features a maximum forward voltage of 1 V at 3 A, with a peak forward surge current capability of 100 A. Electrical characteristics include a typical reverse recovery time ranging from 3.5 to 7.5 μs and a breakdown voltage of 1600 V at 100 μA. Operating temperatures range from -55 °C to +175 °C.
Feature Summary
- Glass passivated junction for high reliability
- Hermetically sealed package construction
- Controlled avalanche characteristics
- High surge current loading capability
Applications
- General purpose rectification diodes
Procurement Notes
Verify the specific ordering code suffix against official documentation to confirm packaging details. The TAP designation indicates availability in an ammopack configuration. Ensure that the required minimum order quantity aligns with distributor specifications before finalizing procurement plans.
Selection Notes
Select this component when an 800 V rating and 3 A continuous current are required within a compact axial leaded form factor. Consider the controlled avalanche behavior if the application involves inductive switching or potential overvoltage transients. Verify thermal resistance requirements based on the intended mounting position and ambient temperature conditions.
Part Context
This part belongs to the 1N5624 through 1N5627 series of standard avalanche sinterglass diodes manufactured by Vishay Semiconductors. All models in this family share identical mechanical dimensions and electrical parameters except for the specific repetitive peak reverse voltage rating assigned to each variant.
Replacement Considerations
Direct substitutes within the same Vishay series include the 1N5624 (200 V), 1N5625 (400 V), and 1N5626 (600 V). These alternatives offer identical physical packages and current ratings but differ strictly in their maximum reverse voltage capabilities.
FAQ
What is the breakdown voltage specification for the 1N5627?
The breakdown voltage is specified as 1600 V when tested at a reverse current of 100 μA.
How does the reverse recovery time vary under different test conditions?
The reverse recovery time ranges from 3.5 μs to 7.5 μs depending on the specific forward current and rate of change of current applied during testing.
