SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5711-1/TR is a small-signal Schottky diode designed for high-frequency applications. It features a metal-to-silicon junction providing ultrafast switching capabilities and low turn-on voltage. The device supports a maximum repetitive reverse voltage of 70 V and an average forward current of 33 mA. It exhibits a typical forward voltage of 1 V at 15 mA and a reverse leakage current of 200 nA at 70 V. Operating temperatures range from -65°C to +150°C, with a package capacitance of 2 pF at 0 V and 1 MHz.
Verify the specific suffix configuration against official datasheets to ensure correct packaging and electrical tolerances. Confirm military qualification status if required by design specifications. Check manufacturer documentation for any recent production changes or obsolescence notices prior to finalizing procurement plans.
Select this component for designs requiring fast recovery times and low forward voltage drop in RF environments. Ensure the 70 V reverse voltage rating exceeds peak circuit voltages. Verify that the 33 mA current limit accommodates maximum load requirements without exceeding thermal constraints within the specified operating temperature range.
This part belongs to the 1N571x series of silicon Schottky barrier rectifiers manufactured by Microchip Technology. These devices are engineered for reliability in demanding electronic environments, offering consistent performance across wide temperature variations while maintaining compact physical dimensions suitable for various mounting styles.
Consult official substitution lists for compatible equivalents. Verify pinout compatibility and electrical parameter alignment before integrating alternative components into existing designs.