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The Microchip Technology 1N5711/TR is a small-signal Schottky diode designed for high-frequency applications. It features a silicon metal-to-silicon junction with a peak repetitive reverse voltage of 70V and an average forward current rating of 33mA. The device exhibits a low forward voltage drop of 1V at 15mA and a maximum reverse leakage current of 200nA at 70V. Operating within a temperature range of -65°C to +150°C, it utilizes the DO-35 axial through-hole package. This component is optimized for UHF/VHF detection and pulse applications requiring ultrafast switching capabilities.
Verify the specific suffix designation against official Microchip documentation to confirm tape-and-reel packaging configuration. Ensure the selected variant meets all required military or industrial qualification standards. Cross-reference datasheet parameters such as thermal resistance and maximum ratings prior to integration. Confirm availability status directly with authorized distributors as supply levels fluctuate.
Select this component when circuit design demands ultrafast recovery times and low forward voltage drops in small-signal configurations. The DO-35 package provides robust mechanical stability for through-hole mounting processes. Evaluate thermal management requirements given the wide operating temperature range. Consider matched batch availability if strict parameter consistency across multiple units is critical for system performance.
This part belongs to the 1N571x series of RF Schottky diodes manufactured by Microchip Technology. The series is characterized by metal-to-silicon junction technology offering superior high-frequency performance compared to standard rectifiers. Variants within this family share similar electrical profiles but differ in packaging options and specific voltage ratings to suit diverse electronic design requirements.
Public confirmed substitute part numbers include 1N5711 and 1N5711-1 from Microchip Technology.