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Product Detailed Parameters
- Description：RF DIODE SCHOTTKY 70V 250MW
- Series：-
- Mfr：Broadcom Limited
- Package：Tape & Reel (TR)
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：70V
- Current - Max：15 mA
- Capacitance @ Vr, F：2pF @ 0V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：250 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：-
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Overview
The Broadcom Limited 1N5711#T50 is a passivated Schottky barrier diode utilizing a patented guard ring design for high breakdown voltage. It operates within a junction temperature range of -65°C to +200°C and features a maximum DC power dissipation of 250 mW at 25°C case temperature. The device provides a minimum breakdown voltage of 70 V, with a maximum forward voltage of 410 mV at 15 mA forward current. Reverse leakage current is limited to 200 nA at 50 V reverse voltage, and typical capacitance is 2.0 pF at 0 V and 1 MHz.
Feature Summary
- Patented guard ring design ensures high breakdown voltage
- Ultrafast switching speed with pico-second response
- Low turn-on voltage characteristics
- Passivated glass package construction
Applications
- High level detecting
- Mixing and switching applications
- Gating and log or A-D converting
- Video detecting and frequency discriminating
- Sampling and wave shaping
Procurement Notes
Verify the specific ordering suffix #T50 corresponds to the 5000-unit tape and reel container format as defined in the official Broadcom ordering information. Confirm that the component meets the Outline 15 package dimensions and lead material specifications (Dumet) required for the intended assembly process. Ensure compliance with RoHS status if applicable to the project requirements.
Selection Notes
Select this component when a high breakdown voltage of 70 V is required alongside low turn-on voltage characteristics. The wide operating temperature range up to +200°C makes it suitable for demanding thermal environments. Consider the 2.0 nH package inductance and 2.0 pF capacitance for high-frequency circuit designs where parasitic effects must be minimized.
Part Context
This part belongs to the 1N5711, 1N5712, and 5082-2800 series of general-purpose Schottky barrier diodes manufactured by Broadcom Limited. The series shares common electrical characteristics and package outlines, differentiated primarily by breakdown voltage ratings and specific application optimizations such as low turn-on voltage variants.
Replacement Considerations
Public confirmed substitutes include 1N5711 from Microchip Technology and 1N5711MS from Microchip Technology. Verify electrical parameters and package compatibility before substitution.
FAQ
What is the maximum junction operating temperature for the 1N5711#T50?
The maximum junction operating and storage temperature range is +200°C.
How is the 1N5711#T50 packaged?
It is packaged in a low cost glass package (Outline 15) and available on tape and reel.
What is the typical package capacitance at 0 V and 1 MHz?
The typical package capacitance is 2.0 pF.
