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Product Detailed Parameters
- Description：RF DIODE PIN 100V 250MW
- Series：-
- Mfr：Broadcom Limited
- Package：Tape & Reel (TR)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：100V
- Current - Max：100 mA
- Capacitance @ Vr, F：0.4pF @ 50V, 1MHz
- Resistance @ If, F：2.5Ohm @ 100mA, 100MHz
- Power Dissipation (Max)：250 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：-
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Overview
The Broadcom Limited 5082-3080#T25 is a PIN diode designed for RF switching and attenuating applications. It features a typical effective carrier lifetime of 1300 ns, a breakdown voltage of 100 V, and a maximum residual series resistance of 2.5 Ω at 100 mA forward current. The device has a total capacitance of 0.4 pF and operates within a junction temperature range of -65°C to +150°C with a power dissipation rating of 250 mW. This specific part number indicates the component is supplied in a tape and reel container holding 2500 devices.
Feature Summary
- Low harmonic distortion characteristics suitable for precision RF circuits
- Large dynamic range capability for variable attenuation applications
- Low series resistance and low capacitance for high-frequency performance
Applications
- RF duplexers
- Antenna switching matrices
- Digital phase shifters
- Time multiplex filters
- Variable RF attenuators
- Automatic gain control circuits
- Electrically tuned filters
- Analog phase shifters
- RF limiters
Procurement Notes
Verify the ordering suffix #T25 confirms the 2500-unit tape and reel packaging format as specified in the manufacturer's ordering information. Ensure compatibility with RS-296-D tape specifications. Confirm RoHS status and lead finish requirements (SnPb) against project constraints before procurement.
Selection Notes
Select this component when a PIN diode with a 100 V breakdown voltage and 2.5 Ω series resistance is required. The 1300 ns carrier lifetime supports applications needing moderate switching speeds. Consider the Outline 15 package dimensions and glass hermetic seal properties for mechanical integration.
Part Context
This component belongs to the 5082-3xxx series of general-purpose PIN diodes intended for low-power RF switching and attenuating tasks. It shares electrical similarities with the 1N5767 but is distinguished by its specific packaging configuration in the #T25 variant.
Replacement Considerations
The 1N5767 is an electrically similar alternative within the same datasheet family. Verify that the replacement matches the required carrier lifetime and package type if substituting.
