5082-2810

5082-2810

  • Description:RF DIODE SCHOTTKY 20V 250MW
  • Series:-

SKU:d0e22659b5c8 Category: Brand:

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Product Detailed Parameters

  • Description:RF DIODE SCHOTTKY 20V 250MW
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Bulk
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):20V
  • Current - Max:35 mA
  • Capacitance @ Vr, F:1.2pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:-

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5082-2810

Overview

The Broadcom Limited 5082-2810 is a passivated Schottky barrier diode featuring a patented guard ring design for high breakdown voltage. It operates within a junction temperature range of -65°C to +200°C and dissipates up to 250 mW. Key electrical specifications include a minimum breakdown voltage of 20 V, a maximum forward voltage of 410 mV at 15 mA, and a maximum reverse leakage current of 100 nA at 15 V. The device exhibits a typical package capacitance of 1.2 pF and inductance of 2.0 nH.

Feature Summary

  • Patented guard ring design ensures high breakdown voltage stability
  • Ultra-fast pico-second switching speed suitable for high-frequency applications
  • Low turn-on voltage characteristics optimized for signal detection

Applications

  • High-level detecting and video detecting circuits
  • Mixing and frequency discriminating applications
  • Switching, gating, and sampling operations
  • Logarithmic or A-D converting systems
  • Wave shaping and UHF mixing tasks

Procurement Notes

Verify the specific ordering suffix (T25, T50, or bulk) to confirm container quantity and tape-and-reel specifications. Ensure compatibility with Outline 15 axial leaded packages. Confirm RoHS compliance status as historical data may vary by manufacturing date. Validate that the component meets the required military or commercial qualification levels if applicable to the design.

Selection Notes

Select the 5082-2810 when a lower breakdown voltage (20 V min) is required compared to the 70 V variants in the series. Consider the 1.2 pF capacitance for high-frequency performance requirements. Evaluate the 410 mV forward voltage drop against system power constraints. Verify thermal derating needs if operating near the maximum 250 mW dissipation limit.

Part Context

This component belongs to the 1N5711/1N5712/5082-2800 Series of general-purpose Schottky barrier diodes. It shares the same Outline 15 glass package and fundamental technology as the 1N5711 and 1N5712 but offers distinct electrical parameters tailored for specific voltage thresholds. The series is designed for cost-effective high-performance RF and microwave applications.

Replacement Considerations

The datasheet lists the 1N5712 as a similar alternative within the same family. Verify that the replacement's 20 V breakdown voltage and 1.2 pF capacitance match the circuit requirements. Check for any differences in matched pair availability or SPICE model parameters if simulation accuracy is critical.

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