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The Broadcom Limited 1N5711#T25 is a passivated Schottky barrier diode utilizing a patented guard ring design for high breakdown voltage. It operates within a junction temperature range of -65°C to +200°C and supports a DC power dissipation of 250 mW at 25°C case temperature. The device features a maximum forward voltage of 410 mV at 15 mA, a minimum breakdown voltage of 70 V, and a maximum reverse leakage current of 200 nA at 50 V. Typical package capacitance is 0.2 pF with an effective carrier lifetime of 100 ps.
Verify the specific ordering suffix #T25 corresponds to the 2500-unit tape and reel container format as defined in the official datasheet. Confirm that the component meets the required RoHS status and environmental compliance standards for the intended deployment environment before finalizing procurement orders.
Select this component when high breakdown voltage and ultrafast switching are critical requirements. Ensure the application operates within the specified -65°C to +200°C junction temperature range. Consider matched batch availability if circuit symmetry regarding forward voltage and capacitance is necessary for the design.
This part belongs to the 1N5711, 1N5712, and 5082-2800 series of general-purpose Schottky barrier diodes manufactured by Broadcom Limited (formerly Avago Technologies). The series is characterized by low cost glass packaging and is designed for robust performance in demanding RF and microwave signal processing environments.
The 1N5711#T50 serves as a direct functional substitute with identical electrical specifications but differs in packaging quantity, offering a 5000-unit tape and reel instead of 2500 units.
The typical package capacitance is 0.2 pF.
It is measured using the Krakauer method at 5 mA, with a maximum value of 100 ps.
The maximum soldering temperature is 260°C for 5 seconds.