1N5711#T25

1N5711#T25

  • Description:RF DIODE SCHOTTKY 70V 250MW
  • Series:-

SKU:96e0f7b733dc Category: Brand:

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Product Detailed Parameters

  • Description:RF DIODE SCHOTTKY 70V 250MW
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):70V
  • Current - Max:15 mA
  • Capacitance @ Vr, F:2pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:-

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1N5711#T25

Overview

The Broadcom Limited 1N5711#T25 is a passivated Schottky barrier diode utilizing a patented guard ring design for high breakdown voltage. It operates within a junction temperature range of -65°C to +200°C and supports a DC power dissipation of 250 mW at 25°C case temperature. The device features a maximum forward voltage of 410 mV at 15 mA, a minimum breakdown voltage of 70 V, and a maximum reverse leakage current of 200 nA at 50 V. Typical package capacitance is 0.2 pF with an effective carrier lifetime of 100 ps.

Feature Summary

  • Patented guard ring design ensures high breakdown voltage
  • Ultrafast switching speed suitable for high-frequency applications
  • Low turn-on voltage characteristics
  • Available in matched pairs or quads for balanced performance

Applications

  • High level detecting
  • Mixing and switching circuits
  • Video detecting and frequency discriminating
  • Sampling and wave shaping

Procurement Notes

Verify the specific ordering suffix #T25 corresponds to the 2500-unit tape and reel container format as defined in the official datasheet. Confirm that the component meets the required RoHS status and environmental compliance standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component when high breakdown voltage and ultrafast switching are critical requirements. Ensure the application operates within the specified -65°C to +200°C junction temperature range. Consider matched batch availability if circuit symmetry regarding forward voltage and capacitance is necessary for the design.

Part Context

This part belongs to the 1N5711, 1N5712, and 5082-2800 series of general-purpose Schottky barrier diodes manufactured by Broadcom Limited (formerly Avago Technologies). The series is characterized by low cost glass packaging and is designed for robust performance in demanding RF and microwave signal processing environments.

Replacement Considerations

The 1N5711#T50 serves as a direct functional substitute with identical electrical specifications but differs in packaging quantity, offering a 5000-unit tape and reel instead of 2500 units.

FAQ

What is the typical package capacitance for the 1N5711?

The typical package capacitance is 0.2 pF.

How is the effective carrier lifetime measured for this diode?

It is measured using the Krakauer method at 5 mA, with a maximum value of 100 ps.

What is the maximum soldering temperature allowed?

The maximum soldering temperature is 260°C for 5 seconds.

1N5711#T251N5711#T25

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