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The Broadcom Limited 1N5711 is a passivated Schottky barrier diode utilizing a patented guard ring design for high breakdown voltage. It operates within a junction temperature range of -65°C to +200°C and supports a DC power dissipation of 250 mW at 25°C case temperature. The device features a maximum forward voltage of 410 mV at 15 mA, with a minimum breakdown voltage of 70 V. Reverse leakage current is limited to 200 nA at 50 V reverse bias. Package capacitance is typically 2.0 pF, and package inductance is 2.0 nH.
Verify the specific ordering suffix (e.g., #T25, #T50) against the datasheet to confirm container type and quantity. Confirm RoHS compliance status as it varies by manufacturing batch and date code. Ensure the supplier provides traceability documentation for the Avago Technologies or Broadcom Limited origin.
Select this component when high breakdown voltage and ultrafast switching are required in a glass axial package. Compare the 250 mW power dissipation limit against thermal constraints. Consider matched pairs if low differential forward voltage is critical for the circuit design.
This part belongs to the 1N5711, 1N5712, and 5082-2800 series of general-purpose Schottky barrier diodes. It shares the Outline 15 glass package form factor with other members of the series, differing primarily in breakdown voltage thresholds and forward current ratings.
Direct substitutes include the 5082-2800 from the same manufacturer family. Verify that replacement parts maintain the 70 V minimum breakdown voltage and 250 mW power dissipation rating to ensure electrical compatibility.
The typical package capacitance is 2.0 pF.
It is measured using the Krakauer method at 5 mA, with a maximum value of 100 ps.
The maximum soldering temperature is 260°C for 5 seconds.