1N5767

Overview

The Broadcom Limited 1N5767 is a silicon PIN diode designed for RF switching and attenuating applications. It operates within a junction temperature range of -65°C to +150°C and supports a maximum power dissipation of 250 mW at 25°C. The device features a peak inverse voltage (breakdown voltage) of 100 V, a residual series resistance of 2.5 Ω measured at 100 mA forward current, and an effective carrier lifetime of 1300 ns. Electrical characteristics include a total capacitance of 0.4 pF at 50 V reverse bias and 1 MHz frequency.

Feature Summary

• Functions as a current-controlled resistor suitable for variable RF attenuators and automatic gain control circuits.
• Utilizes a glass hermetic seal with dumet leads in the Outline 15 package for environmental durability.
• Engineered for low harmonic distortion and large dynamic range in high-frequency signal processing.

Applications

• RF duplexers
• Antenna switching matrices
• Digital phase shifters
• Time multiplex filters

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and packaging specifications against the official datasheet requirements. Ensure compliance with RoHS directives if lead-free variants are required, noting that standard versions utilize tin-lead finishes.

Selection Notes

Select this component when designing circuits requiring precise RF attenuation or switching capabilities. Evaluate the 2.5 Ω series resistance and 0.4 pF capacitance against system impedance matching requirements. Consider the 1300 ns carrier lifetime for appropriate switching speed constraints in analog phase shifting or modulation tasks.

Part Context

This part belongs to the 1N57xx series of general-purpose PIN diodes manufactured by Broadcom Limited. These devices are specifically engineered for radio frequency control applications where low distortion and stable electrical parameters are critical for maintaining signal integrity in complex RF networks.

Replacement Considerations

Direct substitutes within the same family include the 5082-3080 and 5082-3081. Verify electrical parameter compatibility, particularly breakdown voltage and series resistance, before implementing any cross-reference replacement in existing designs.

FAQ

What is the minimum effective carrier lifetime specified for the 1N5767?

The datasheet specifies a minimum effective carrier lifetime of 1.0 msec for the 1N5767.

How is the RF resistance of the 1N5767 controlled?

The RF resistance is a function of the forward bias current flowing through the diode, allowing it to act as a current-controlled resistor.

What is the maximum soldering temperature allowed for this component?

The maximum soldering temperature is 260°C for a duration of 5 seconds.