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The Broadcom Limited 1N5719 is a general-purpose PIN diode designed for low-power RF switching and attenuating applications. It operates within a junction temperature range of -65°C to +150°C and supports a maximum power dissipation of 250 mW at 25°C. Key electrical specifications include a breakdown voltage (VBR) of 150 V, a residual series resistance (RS) of 1.25 Ω, and a total capacitance (CT) of 0.3 pF. The device features an effective carrier lifetime of at least 100 ns and a typical reverse recovery time of 100 ns.
Verify the specific ordering suffix when purchasing, as it determines the container type and quantity. Options include tape and reel configurations with 2500 or 5000 units, or bulk packaging in antistatic bags containing 100 units. Confirm lead times and availability directly with authorized distributors, as stock levels fluctuate based on manufacturing schedules.
Select the 1N5719 for general-purpose switching and attenuating tasks requiring a 150 V breakdown voltage and 1.25 Ω series resistance. Ensure the application stays within the 250 mW power dissipation limit and operates between -65°C and +150°C. For band-switching requirements, consider alternative models like the 5082-3188 which offer different performance characteristics optimized for VHF/UHF bands.
The 1N5719 belongs to a family of PIN diodes manufactured by Broadcom Limited, including part numbers such as 1N5767, 5082-3001, and 5082-3039. These components share similar mechanical specifications, utilizing an Avago Outline 15 package with a glass hermetic seal and dumet leads. The family serves diverse RF functions ranging from general switching to current-controlled resistor applications.
The 5082-3039 is a direct substitute within the same datasheet, offering identical capacitance and carrier lifetime but with a slightly higher series resistance of 1.25 Ω and a lower breakdown voltage of 150 V. Verify that the replacement meets the specific voltage and resistance requirements of the circuit design.