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The Broadcom Limited 5082-0012 is a silicon PIN diode chip designed for hybrid MIC switches and attenuators. It features a planar construction with silicon dioxide or nitride passivation, optimized for long-term reliability and electrical uniformity. Key electrical specifications at 25°C include a reverse breakdown voltage of 150 V, junction capacitance of 0.12 pF, typical series resistance of 1.0 Ω, and a carrier lifetime of 400 ns. The device supports a junction operating temperature range from -65°C to +150°C and withstands soldering temperatures up to +425°C for one minute.
Verify the component datasheet against the manufacturer's official documentation to confirm current availability status and specific lot traceability requirements. Ensure that handling procedures strictly follow the recommended storage in dry nitrogen purged environments to maintain device integrity prior to assembly.
Select this component for low-power RF switching applications requiring tight control over series resistance and recovery time. Evaluate the thermal management capabilities to ensure the junction temperature remains within the specified -65°C to +150°C operational range during continuous duty cycles.
This PIN diode chip serves as a general-purpose semiconductor switch for microwave integrated circuits. It replaces older part numbers such as 5965-8880E. The device is suitable for integration into attenuators, modulators, and pulse shaping circuits where fast recovery and low insertion loss are critical design parameters.
The datasheet explicitly states that this part obsoletes the 5965-8880E. Verify pinout compatibility and electrical parameter tolerances when transitioning between these specific identifiers.
The device can withstand a maximum soldering temperature of +425°C for a duration of one minute.
Acids such as hydrofluoric (HF), nitric (HNO3), and hydrochloric (HCl) should not be used for cleaning surface contamination.
The typical junction capacitance is 0.12 pF, measured at a reverse voltage of 50 V and a frequency of 1 MHz.