1N5767#T25

Overview

The Broadcom Limited 1N5767 is a silicon PIN diode designed for RF switching and attenuating applications. It operates within a junction temperature range of -65°C to +150°C and supports a maximum power dissipation of 250 mW at 25°C. Key electrical specifications include a breakdown voltage (VBR) of 100 V, a residual series resistance (RS) of 2.5 Ω measured at 100 mA forward current, and an effective carrier lifetime (τ) of 1300 ns typical. The device exhibits a total capacitance (CT) of 0.4 pF at 50 V reverse bias. Additional constraints specify a minimum carrier lifetime of 1.0 msec, a maximum reverse leakage current of 1 µA at 50 V, and a maximum forward voltage of 1 V at 100 mA.

Feature Summary

• Functions as a current-controlled resistor suitable for variable RF attenuators and automatic gain control circuits.
• Provides low harmonic distortion and large dynamic range for signal processing.
• Features low series resistance and low capacitance for efficient RF performance.

Applications

• RF duplexers
• Antenna switching matrices
• Digital phase shifters
• Time multiplex filters
• Electrically tuned filters

Procurement Notes

Verify the specific ordering suffix required for the desired packaging configuration before placing orders. The #T25 designation indicates a tape and reel container holding 2500 devices, whereas bulk quantities are available in antistatic bags. Confirm RoHS compliance status with the manufacturer, as historical data suggests potential lead-based finish requirements for this component family.

Selection Notes

Select this component when a high effective carrier lifetime is necessary for stable attenuation characteristics. Ensure the application requires a breakdown voltage of at least 100 V and can accommodate a residual resistance of 2.5 Ω. Verify that the operating frequency aligns with the specified capacitance and resistance parameters for optimal insertion loss and isolation performance.

Part Context

This part belongs to the 1N57xx series of general-purpose PIN diodes manufactured by Broadcom Limited. It shares the Outline 15 mechanical package with other variants like the 1N5719 and 5082-3080. The series is characterized by glass hermetic seals and dumet leads, intended for robust RF control applications requiring precise impedance modulation.

Replacement Considerations

The 5082-3080 is a direct functional substitute within the same datasheet offering identical 100 V breakdown and 2.5 Ω resistance specifications. Other series members such as the 1N5719 or 5082-3001 differ significantly in breakdown voltage and resistance values, requiring circuit re-evaluation if used as replacements.

FAQ

What is the minimum effective carrier lifetime for the 1N5767?

The 1N5767 has an additional specification requiring a minimum effective carrier lifetime of 1.0 msec, distinct from the typical 1300 ns value listed for the broader series.

How is the RF resistance of this diode controlled?

The RF resistance is a function of the forward bias current flowing through the diode, allowing it to act as a current-controlled resistor for attenuation and switching.

What are the maximum forward voltage and reverse leakage limits?

The maximum forward voltage is 1 V at 100 mA, and the maximum reverse leakage current is 1 µA at 50 V reverse bias.