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Product Detailed Parameters
- Description：DIODE SCHOTTKY 50V 33MA UB
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io)：33mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 15 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：200 nA @ 50 V
- Capacitance @ Vr, F：2pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Operating Temperature - Junction：-65°C ~ 150°C
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Overview
The Microchip Technology 1N5711UB/TR is a ceramic surface mount Schottky barrier diode qualified per MIL-PRF-19500/444. It features a maximum working peak reverse voltage of 50 V and an average rectified output current of 33 mA. The device exhibits a minimum breakdown voltage of 70 V at 10 µA, with a maximum forward voltage of 1.0 V at 15 mA and a maximum reverse leakage current of 200 nA at 50 V. Capacitance is limited to 2.0 pF at 0 V and 1 MHz. Operating junction and storage temperatures range from -65 °C to +150 °C.
Feature Summary
- Ceramic encased construction designed for high-reliability military applications
- Low reverse leakage characteristics suitable for sensitive signal processing
- RoHS compliant by design
Applications
- High-reliability UHF/VHF detection circuits
- Pulse application environments requiring fast switching
- Military grade surface mount integration
Procurement Notes
Verify the specific ordering suffix to confirm tape and reel packaging configuration. Ensure the requested reliability level matches JAN, JANTX, JANTXV, or JANS requirements. Confirm polarity selection (Common Anode, Common Cathode, Doubler, or Unidirectional) aligns with circuit topology. Validate that the component meets RoHS compliance standards required for the assembly process.
Selection Notes
Select this component when a low-profile ceramic surface mount package is required for harsh environments. Consider the 33 mA average current limit and 50 V reverse voltage rating against circuit demands. Evaluate the thermal resistance of 100 °C/W for heat dissipation planning. Compare against axial-leaded equivalents if space constraints allow for larger footprints.
Part Context
This part belongs to the 1N5711UB and 1N5712UB series of Schottky barrier diodes. It serves as the surface mount equivalent of JEDEC registered 1N5711 numbers. The series offers various polarities including common anode, common cathode, and doubler configurations. It is distinct from the axial-leaded DO-35 versions available in the same family.
Replacement Considerations
Direct replacements include other 1N5711 variants such as 1N5711UR-1 or 1N5711-1 depending on package preference. Verify that substitute components maintain the same MIL-PRF-19500/444 qualification levels and ceramic package dimensions.
