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The 1N5711UBCC is a small-signal Schottky barrier diode manufactured by Microchip Technology. It utilizes silicon technology and is housed in the UB-3 ceramic surface-mount package. The device features a maximum repetitive reverse voltage of 70 V and an average forward current rating of 33 mA. It is designed for high-reliability applications, offering low reverse leakage characteristics and ultrafast switching capabilities.
Verify the specific revision level and qualification status (JAN, JANTX, or JANTXV) against the official datasheet before procurement. Confirm that the UB-3 package dimensions match the design constraints. Ensure compliance with RoHS directives if required by the end application. Check for lead-free soldering compatibility during assembly.
Select this component when a hermetically sealed, surface-mount Schottky diode is required for RF detection or pulse applications. It serves as the surface mount equivalent to the axial-leaded 1N5711. Consider thermal resistance and junction temperature limits (-65°C to +150°C) for high-temperature environments. Verify pinout compatibility with existing footprints.
This part belongs to the 1N5711UB series, which includes variants like 1N5711UBD and 1N5711UBCC. These are qualified per MIL-PRF-19500/444. The series offers unidirectional, doubler, common anode, and common cathode polarities. It replaces older through-hole versions while maintaining military-grade performance standards.
Direct substitutes include other 1N5711UB variants such as 1N5711UBD or 1N5711UBCA, provided the package and qualification levels match. Axial equivalents like 1N5711-1 require PCB redesign. Verify electrical parameters and thermal characteristics before substitution.