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The Central Semiconductor CSHD6-100C is a surface mount silicon dual common cathode high voltage Schottky rectifier rated for 6.0 amperes and 100 volts. It features a DPAK case with thermal resistance of 3.5 °C/W. Maximum ratings include a peak forward surge current of 50 A and an operating junction temperature range from -65 to +150 °C. Electrical characteristics specify a maximum reverse leakage current of 30 µA at 100 V and a typical forward voltage drop of 0.73 V at 3.0 A.
Verify the specific ordering suffix required for your manufacturing process. The datasheet indicates that adding PBFREE ensures lead-free plating compliance, while TIN/LEAD specifies tin-lead options. Confirm RoHS status and availability directly with authorized distributors or the manufacturer before finalizing procurement plans.
Select this component when a dual Schottky rectifier with a 100-volt rating and 6.0-ampere average current capacity is required. Ensure the design accommodates the DPAK package dimensions and the specified thermal resistance of 3.5 °C/W. Consider the maximum junction temperature limit of 150 °C for thermal management strategies.
This device belongs to the Central Semiconductor Schottky rectifier family, specifically designed for surface mount applications. It utilizes silicon technology to provide high voltage performance in a compact DPAK case. The dual common cathode arrangement allows for efficient space utilization in circuit board layouts compared to discrete single diodes.
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the 100-volt rating, 6.0-ampere current capacity, and DPAK package compatibility. Verify electrical parameters such as forward voltage and leakage current match original specifications.
The thermal resistance (junction-to-case) is 3.5 °C/W.
Pin 2 serves as the common cathode and is connected to the tab. Pins 1 and 3 are the anodes for the respective diodes.
The maximum operating and storage junction temperature is +150 °C.