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The CMPSH-3SE TR PBFREE is a dual-in-series silicon Schottky diode from the enhanced specification CMPSH-3E series, housed in an SOT-23 surface-mount package. It features a peak repetitive reverse voltage of 40 V and a continuous forward current rating of 200 mA. The device supports a forward surge current of 750 mA with a power dissipation capacity of 350 mW. Electrical characteristics include a maximum forward voltage of 1.0 V at 200 mA and a typical junction capacitance of 7.0 pF. Operating temperatures range from -65°C to +150°C.
Verify the specific ordering suffix against manufacturer documentation to confirm plating requirements. The PBFREE designation indicates lead-free compliance, while alternative suffixes may denote tin/lead options. Confirm package type and marking codes match design schematics. Ensure thermal management aligns with the specified power dissipation limits during integration.
Select this component when a dual-series Schottky configuration is required in an SOT-23 footprint. The enhanced specifications offer higher current handling than previous iterations. Evaluate the 40V reverse voltage rating against circuit peak inverse voltages. Consider the low junction capacitance for high-frequency applications where switching speed is critical.
This part belongs to the Central Semiconductor CMPSH-3E series, which represents an upgrade over the legacy CMPSH-3 line. The series focuses on improving key parameters like forward current and breakdown voltage while maintaining the compact SOT-23 form factor. The CMPSH-3SE specifically denotes the dual-in-series topology variant within this enhanced family.
Direct substitutes include other dual-in-series Schottky diodes in SOT-23 packages with matching 40V and 200mA ratings. Verify pinout compatibility, as the series configuration differs from common-anode or common-cathode variants. Check if generic replacements meet the enhanced electrical specifications rather than standard baseline values.