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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 30V 200MA SOT23
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io) (per Diode)：200mA
- Voltage - Forward (Vf) (Max) @ If：800 mV @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：5 ns
- Current - Reverse Leakage @ Vr：2 µA @ 25 V
- Operating Temperature - Junction：-65°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor CBAT54C TR PBFREE is a surface mount silicon Schottky diode housed in an SOT-23 package. It features a dual common cathode configuration with a continuous reverse voltage of 30 V and a continuous forward current of 200 mA. The device supports a peak repetitive forward current of 300 mA and a forward surge current of 600 mA, dissipating up to 350 mW. Electrical characteristics include a maximum reverse leakage current of 2.0 μA at 25 V, a junction capacitance of 10 pF, and a reverse recovery time of 5.0 ns. Operating temperatures range from -65°C to +150°C.
Feature Summary
- Dual common cathode Schottky diode structure for compact circuit integration
- Ultra-fast switching capability with 5.0 ns reverse recovery time
- Low forward voltage drop ranging from 240 mV to 800 mV across current levels
- High thermal stability supporting operation up to +150°C
Applications
- High-speed switching circuits
- Voltage clamping applications
- Reverse polarity protection
- Line termination in communication systems
Procurement Notes
Verify the specific suffix 'TR PBFREE' against official documentation to confirm tape-and-reel packaging and lead-free plating status. Ensure the ordering code matches the dual common cathode variant (CL43 marking) rather than single or other configurations within the CBAT54 series. Confirm RoHS compliance requirements align with project specifications before finalizing procurement.
Selection Notes
Select this component when a low-profile surface mount solution with fast recovery times is required. The dual common cathode arrangement allows for efficient use of board space compared to discrete single diodes. Consider the 350 mW power dissipation limit and 357 °C/W thermal resistance for adequate heat management in dense PCB layouts.
Part Context
This part belongs to the CBAT54 series of surface mount silicon Schottky diodes manufactured by Central Semiconductor Corp. The series includes variants such as CBAT54 (single), CBAT54A (common anode), and CBAT54S (series). All share similar electrical ratings but differ in internal connection topology and marking codes.
Replacement Considerations
Direct substitutes must match the SOT-23 package, 30 V reverse voltage, 200 mA forward current, and dual common cathode configuration. Verify that alternative components maintain comparable reverse recovery times and forward voltage characteristics to ensure circuit performance parity.
FAQ
What is the marking code for the CBAT54C?
The marking code for the CBAT54C is CL43.
How does the CBAT54C differ from the CBAT54A?
The CBAT54C is configured as a dual common cathode, whereas the CBAT54A is configured as a dual common anode.
What is the maximum operating junction temperature?
The maximum operating and storage junction temperature is +150°C.
