ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE ARRAY SCHOTTKY 50V 33MA UB
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Series Connection
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：33mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 15 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：200 nA @ 50 V
- Operating Temperature - Junction：-65°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：-
- Qualification：-
Download product information
Overview
The Microchip Technology 1N5711UBD/TR is a Schottky barrier diode in a ceramic surface mount package, qualified per MIL-PRF-19500/444. It features a minimum breakdown voltage of 70 V and a maximum working peak reverse voltage of 50 V. The device supports an average rectified output current of 33 mA with a junction temperature range from -65 °C to +150 °C. Electrical characteristics include a maximum forward voltage of 1.0 V at 15 mA and a maximum reverse leakage current of 200 nA at 50 V.
Feature Summary
- Ceramic encased construction for high-reliability applications
- Military grade qualification compliant with MIL-PRF-19500/444
- Low reverse leakage characteristics
- RoHS compliant by design
Applications
- High-reliability military electronics
- Surface mount circuits requiring low-profile packaging
- Applications sensitive to electrostatic discharge (ESD)
Procurement Notes
Verify the specific reliability level required, as the base part number covers JAN, JANTX, JANTXV, and JANS grades. Confirm that the 'D' suffix correctly denotes the doubler polarity configuration for the intended circuit topology. Ensure the tape and reel packaging meets EIA-418D standards if automated assembly is utilized.
Selection Notes
Select this component when a hermetically sealed ceramic surface mount Schottky diode is necessary for harsh environments. The 1N5711UBD variant specifically provides the doubler polarity option within the UB package family. Consider the thermal resistance of 100 °C/W and derating requirements when designing for elevated operating temperatures near the 150 °C limit.
Part Context
This device belongs to the 1N5711UB and 1N5712UB series of Schottky barrier diodes manufactured by Microchip Technology. The series offers various polarity options including unidirectional, common anode, common cathode, and doubler configurations. These components serve as surface mount equivalents to traditional JEDEC registered axial-leaded numbers.
Replacement Considerations
Direct replacements include other 1N5711UB variants with different reliability levels such as JAN1N5711UBD or JANTX1N5711UBD. For non-military applications, commercial grade versions without the prefix may be considered if environmental sealing is not required.
