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The Central Semiconductor CMLD6001DO is a surface-mount silicon dual switching diode housed in an SOT-563 package. It features two isolated, opposing diodes manufactured via epitaxial planar process for ultra-low leakage applications. Key electrical parameters include a continuous reverse voltage of 75V and peak repetitive reverse voltage of 100V per diode. The device supports a continuous forward current of 250mA with a maximum junction temperature range of -65°C to +150°C. Reverse leakage current is limited to 500pA at 75V, while forward voltage ranges from 0.85V to 1.1V depending on current levels.
Verify the specific ordering suffix when purchasing. The PBFREE designation indicates lead-free plating compliance. Confirm that the required plating option matches the project specifications, as tin/lead variants require a distinct suffix. Ensure the component meets environmental regulations relevant to the target deployment region before finalizing procurement orders.
Select this component for designs requiring minimal reverse leakage current in high-voltage environments. The dual opposing structure allows for complex switching topologies without occupying excessive board space. Evaluate the thermal resistance and power dissipation limits against the expected load conditions to ensure reliable operation within the specified temperature range.
This device belongs to Central Semiconductor's PICOmini series of surface mount diodes. It utilizes an epoxy mold compound and epitaxial planar technology. The marking code C60 identifies the part on the package. The SOT-563 case provides a small footprint suitable for dense PCB layouts requiring multiple discrete diode functions.
Direct substitutes must match the SOT-563 package, dual opposing configuration, and 100V peak reverse voltage rating. Verify that alternative components maintain comparable leakage current specifications below 500pA and similar forward voltage drops at equivalent test currents.