SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BAT54A-G is a surface-mount Schottky barrier diode manufactured by Comchip Technology in an SOT-23 package. It features a dual common anode configuration with silicon construction. Key electrical parameters include a maximum repetitive reverse voltage of 30 V and a DC forward current rating of 200 mA. The device exhibits a typical total capacitance of 7.6 pF at 1.0 V reverse bias and a reverse recovery time of 5.0 ns. Maximum power dissipation is rated at 225 mW at 25°C ambient temperature, derating by 1.8 mW/°C above this threshold. Operating junction temperatures range up to 125°C.
Verify the specific suffix designation to confirm RoHS compliance status as indicated by the manufacturer documentation. Ensure the ordering part number matches the required dual common anode configuration distinct from other variants within the series. Confirm package dimensions align with PCB footprint requirements prior to procurement.
Select this component when a low forward voltage drop and rapid switching speed are critical for circuit performance. The dual common anode topology allows for efficient implementation in logic gate configurations or OR-ing applications. Verify that the 30 V reverse voltage rating exceeds the maximum peak inverse voltage expected in the target application environment.
This component belongs to the BAT54 series of surface mount Schottky diodes produced by Comchip Technology. The series utilizes silicon technology to achieve low conduction losses and negligible switching times. The BAT54A-G variant specifically denotes the dual common anode configuration within the broader product family available in various surface mount packages.
BAT54C-G (Dual Anode Common Cathode)
The typical reverse recovery time is 5.0 ns.
Power dissipation must be derated by 1.8 mW/°C for temperatures above 25°C.
The device incorporates a PN junction guard ring for transient and ESD protection.