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The CMSD2004S is a surface-mount dual in-series silicon switching diode manufactured by Central Semiconductor Corp. It utilizes an epitaxial planar process for high voltage capability within a SOT-323 package. Key electrical parameters include a continuous reverse voltage of 300 V, a continuous forward current of 225 mA, and a peak forward surge current of 4.0 A at 1.0 µs. The device operates across a junction temperature range of -65 to +150 °C with a power dissipation rating of 275 mW.
Verify the specific ordering suffix when purchasing. The PBFREE designation indicates lead-free plating compliance. Requesting tin/lead plated devices requires adding the TIN/LEAD suffix to the part number. Confirm package type and marking code B6D match project requirements before finalizing orders.
Select this component for designs necessitating a dual in-series arrangement in a compact SOT-323 footprint. Ensure the required reverse voltage does not exceed 300 V and that thermal management accommodates the 275 mW dissipation limit. Verify compatibility with the specified operating temperature range of -65 to +150 °C.
Central Semiconductor specializes in discrete semiconductor products, including diodes, transistors, and MOSFETs. The company emphasizes custom solutions and standard device manufacturing. This component belongs to their surface-mount switching diode portfolio, targeting high-reliability applications.
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other dual in-series silicon switching diodes in the SOT-323 package only if electrical parameters such as reverse voltage and forward current are strictly matched.