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The Microchip Technology 1N5711UR-1 is a metal-to-silicon junction Schottky diode designed for high-level UHF/VHF detection and pulse applications. It features a maximum repetitive reverse voltage of 70 V and an average forward current rating of 33 mA. The device exhibits a low turn-on voltage, typically 1 V at 15 mA, and a maximum reverse leakage current of 200 nA at 100 V. Operating within a junction temperature range of -65°C to +150°C, it utilizes the DO-213AA (SMB) surface-mount package.
Verify component authenticity through official Microchip channels or authorized distributors. Confirm that the specific suffix matches the required military or commercial grade specifications. Ensure compliance with relevant export control classifications and environmental regulations prior to integration into final designs.
Select this component when ultrafast switching and low forward voltage drop are critical for RF signal integrity. The surface-mount DO-213AA package facilitates automated assembly. Evaluate thermal management requirements against the specified operating temperature range to ensure reliable performance in high-frequency detection scenarios.
This part belongs to the 1N5711 series of small-signal Schottky diodes manufactured by Microchip Technology. It serves as a surface-mount equivalent to traditional axial-leaded variants, maintaining identical electrical characteristics while offering compact footprint advantages for modern PCB layouts and high-density electronic assemblies.
Public confirmed substitute part numbers are not available in the provided documentation.