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The Microchip Technology 1N5711UR-1E3/TR is a small-signal Schottky barrier diode designed for high-reliability applications. It features a silicon construction with a single configuration housed in a DO-213AA (SMBL) surface-mount package. The device supports a maximum repetitive reverse voltage of 50 V and an average forward current of 33 mA. Key electrical parameters include a maximum forward voltage of 1 V at 15 mA, a reverse leakage current of 200 nA at 50 V, and a junction capacitance of 2 pF at 0 V. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'E3' indicates lead-free compliance and 'TR' denotes tape-and-reel packaging when sourcing. Confirm that the component meets MIL-PRF-19500/444 qualification requirements if intended for defense or space-grade deployments. Ensure the supplier provides valid traceability documentation for the hermetically sealed glass package.
Select this component for designs requiring robust surface-mount Schottky rectification with strict environmental tolerance limits. The DO-213AA package offers a compact footprint suitable for dense PCB layouts. Consider the 50 V reverse voltage rating and 33 mA current capacity against peak load conditions to ensure adequate safety margins during operation.
This part belongs to the 1N5711 series of small-signal Schottky diodes manufactured by Microchip Technology. It is functionally related to other variants such as the JANTX1N5711UR-1 and CDLL equivalents, sharing similar electrical profiles but differing in packaging and specific military qualification levels.
Publicly confirmed substitute part numbers are not available in the provided source material.