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The 1N5711UR-1E3 is a silicon Schottky barrier diode manufactured by Microchip Technology. It features a single configuration with a maximum repetitive reverse voltage of 70 V and an average forward current rating of 33 mA. The device exhibits a maximum forward voltage of 1 V at 15 mA and a reverse leakage current of 200 nA at 100 V. Operating within a junction temperature range of -65°C to +150°C, it utilizes the DO-213AA (SMB) surface-mount package. This component is qualified under MIL-PRF-19500/444 for high-reliability applications.
Verify that the suffix E3 indicates lead-free composition while maintaining the same electrical specifications as the standard UR-1 variant. Confirm the specific military qualification level (JAN, JANTX, or JANTXV) required for the design, as these levels may have distinct ordering prefixes despite sharing the base model number. Ensure the DO-213AA package compatibility matches the PCB footprint constraints.
Select this component when hermetic sealing and radiation hardness are critical requirements compared to commercial equivalents. The 33 mA current rating limits suitability for power rectification, making it appropriate primarily for signal processing and switching roles. Consider the thermal management capabilities provided by the glass MELF package for high-temperature environments exceeding standard commercial diode ratings.
This part belongs to the 1N5711 series of small-signal Schottky diodes produced by Microchip Technology. The series includes various package options such as axial leaded and surface-mount configurations. The UR-1 designation specifically identifies the surface-mount version housed in the DO-213AA package, distinguishing it from through-hole variants like the standard 1N5711.
Public confirmed substitute part numbers include CDLL6857E3.